Quantum simulations of spin-relaxation and transport in copper

K. P. McKenna () and G. J. Morgan

The European Physical Journal B: Condensed Matter and Complex Systems, 2007, vol. 59, issue 4, 451-456

Abstract: A quantum equation of motion method is applied to simulate conduction electron spin-relaxation and transport in the presence of the spin-orbit interaction and disorder. A spin-relaxation time of 25ps is calculated for Cu with a realistic low temperature resistivity of 3.2 μΩ cm – corresponding to a spin-diffusion length of about 0.4 μm. Spin-relaxation in a finite nanocrystallite of Cu is also simulated and a short spin-relaxation time (0.47 ps) is calculated for a crystallite with 7% surface atoms. The spin-relaxation calculated for bulk Cu is in good agreement with experimental evidence, and the dramatic nanocrystallite effect observed has important implications for nano-spintronic devices. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Keywords: 72.25.Ba Spin polarized transport in metals; 73.63.-b Electronic transport in nanoscale materials and structures; 72.25.Hg Electrical injection of spin polarized carriers (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1140/epjb/e2007-00305-2

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