Pseudo spin-valves with Al or Nb as spacer layer: GMR and search for spin switch behaviour

F. Russo, G. Carapella (), V. Granata, N. Martucciello and G. Costabile

The European Physical Journal B: Condensed Matter and Complex Systems, 2007, vol. 60, issue 1, 61-66

Abstract: The magnetoresistance of several Ferromagnet/Normal metal/Ferromagnet spin-valve type structures has been investigated using Al as normal spacer layer. A magnetoresistance ratio up to 4.1% at room temperature and 5.7% at 0.3 K is found for the sandwich with both Co layers, while slightly lower signals are found for the structures involving CoFe and NiFe layers. The magnetoresistance dependence for Co/Al/Co, Co/Al/CoFe and Co/Al/NiFe on the spacer layer thickness exhibits the familiar non monotonic behaviour with second peak slightly larger than the one reported for Cu based pseudo spin valves. At cryogenic temperatures, preliminary results on the onset of spin switch effects in Co/Al/Co and the full spin switch effect in Co/Nb/Co are also reported here. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Keywords: 72.25.-b Spin polarized transport, 85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields, 73.43.Qt Magnetoresistance, (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1140/epjb/e2007-00329-6

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