Γ-X mixing in GaAs-Ga 1-x Al x As quantum wells under hydrostatic pressure

M. E. Mora-Ramos, S. Y. López and C. A. Duque ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2008, vol. 62, issue 3, 257-261

Abstract: The mixing between the Γ and X conduction-band valleys in GaAs-Ga 1-x Al x As quantum wells is investigated by using a phenomenological model which takes into account the effects of applied hydrostatic pressure. The dependencies of the variationally calculated photoluminescence peak-energy transitions on the applied hydrostatic pressure and quantum-well width are presented. A systematic study of the Γ-X mixing parameter is also reported. In particular, it is shown that the inclusion of the Γ-X mixing explains the non-linear behavior in the photoluminescence peak of confined exciton states that has been experimentally observed for pressures above 15 kbar in GaAs-Ga 1-x Al x As quantum wells. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2008

Keywords: 71.55.Eq III-V semiconductors; 73.21.Fg Quantum wells (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1140/epjb/e2008-00161-6

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