Conductance properties in spin field-effect transistors

J. Yang (), C. Lei, C. Rong and K. M. Jiang

The European Physical Journal B: Condensed Matter and Complex Systems, 2008, vol. 62, issue 3, 263-266

Abstract: Conductance properties in spin field-effect transistors (SFET) are studied by taking into account the Rashba spin-orbit coupling strength, the presence of external magnetic field, the angle between the direction of magnetization and the conductance band mismatch between the ferromagnetic contacts and the channel. It is shown that the conductance of the SFET has high peaks while the value of external magnetic field varies. These peaks become more and more pronounced with the potential barriers strength increasing. The conductance peaks also appear by increasing the strength of the spin-orbit coupling. It is found that the conductance exhibits quantum oscillating behavior when varying the angle between the direction of magnetization in the two contacts. The influence of conductance band mismatch between the contacts and channel is also discussed. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2008

Keywords: 73.40.Sx Metal-semiconductor-metal structures; 72.25.Hg Electrical injection of spin polarized carriers; 71.70.Ej Spin-orbit coupling; Zeeman and Stark splitting; Jahn-Teller effect; 73.21.-b Electron states and collective excitations in multilayers; quantum wells; mesoscopic; and nanoscale systems; 72.25.Dc Spin polarized transport in semiconductors (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1140/epjb/e2008-00172-3

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