Theory of intraband transition linewidths due to LO phonon scattering in triangular well based on the many body projection method

N. L. Kang, H. M. Lee, S. C. Lee and S. D. Choi ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2008, vol. 63, issue 1, 59-63

Abstract: Utilizing the state dependent projection technique, we derive a formula for intraband transition linewidths due to longitudinal optical phonon scattering for the electrons in a triangular potential well. We find for GaN that the absorption power is keenly affected by the screening in such a way that the power increases with the electron density. We also find that the linewidth increases with the temperature, but decreases with the electric field applied to the system. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2008

Keywords: 71.38.-k Polarons and electron-phonon interactions, 72.10.-d Theory of electronic transport; scattering mechanisms, 73.21.Fg Quantum wells, (search for similar items in EconPapers)
Date: 2008
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DOI: 10.1140/epjb/e2008-00214-x

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