Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study
H.-L. Shi () and
Y. Duan
The European Physical Journal B: Condensed Matter and Complex Systems, 2008, vol. 66, issue 4, 439-444
Keywords: 71.20.Nr Semiconductor compounds; 71.55.Gs II-VI semiconductors; 61.72.Bb Theories and models of crystal defects (search for similar items in EconPapers)
Date: 2008
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Persistent link: https://EconPapers.repec.org/RePEc:spr:eurphb:v:66:y:2008:i:4:p:439-444
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DOI: 10.1140/epjb/e2008-00448-6
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