Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations

K. Köksal (), B. Gönül and M. Oduncuoğlu

The European Physical Journal B: Condensed Matter and Complex Systems, 2009, vol. 69, issue 2, 211-218

Keywords: 73.21.Fg Quantum wells, 73.61.Ey III-V semiconductors, 42.55.Px Semiconductor lasers; laser diodes, 42.60.Mi Dynamical laser instabilities; noisy laser behavior, (search for similar items in EconPapers)
Date: 2009
References: View complete reference list from CitEc
Citations:

Downloads: (external link)
http://hdl.handle.net/10.1140/epjb/e2009-00151-2 (text/html)
Access to full text is restricted to subscribers.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:spr:eurphb:v:69:y:2009:i:2:p:211-218

Ordering information: This journal article can be ordered from
http://www.springer.com/economics/journal/10051

DOI: 10.1140/epjb/e2009-00151-2

Access Statistics for this article

The European Physical Journal B: Condensed Matter and Complex Systems is currently edited by P. Hänggi and Angel Rubio

More articles in The European Physical Journal B: Condensed Matter and Complex Systems from Springer, EDP Sciences
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().