Spin-fluctuation mediated high-temperature ferromagnetism in Si:Mn dilute magnetic semiconductors

V. N. Men’shov, V. V. Tugushev and S. Caprara ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, vol. 77, issue 3, 337-343

Abstract: We discuss a possible route to explain high-temperature ferromagnetism in Si:Mn dilute magnetic semiconductors. We argue that most Mn atoms are segregated within nanometer-sized regions of magnetic precipitate and form the alloy, or compound, MnSi 2 -z with z ≈ (0.25 $\div$ 0.30), whereas a small minority of Mn atoms forms Ångström-sized magnetic defects embedded in the host. Assuming that MnSi 2 -z is a weak itinerant ferromagnet which supports sizable spin fluctuations (paramagnons) far above the intrinsic Curie temperature, we show that the Stoner enhancement of the exchange interaction between the local magnetic moments of the defects occurs. As a result, a significant increase of the temperature of global ferromagnetic order in the system is achieved. We develop a phenomenological approach, to qualitatively describe this effect. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010

Date: 2010
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DOI: 10.1140/epjb/e2010-00271-6

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