Tunneling properties of hybrid magnetoelectric nanoscale devices

A. F. Klinskikh, P. A. Meleshenko (), A. V. Dolgikh and D. A. Chechin

The European Physical Journal B: Condensed Matter and Complex Systems, 2010, vol. 78, issue 4, 469-474

Abstract: We present the simple model of a hybrid magnetoelectric nanoscale device which is based on the transfer matrix formalism. In the presented model the one-electron tunneling properties of such structures are analyzed in the ballistic regime. Spin selectivity was also investigated and found to be absent in these structures. The current-voltage characteristics as well as the dependencies of resistance on the magnetic field strength for described system are presented. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2010

Date: 2010
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DOI: 10.1140/epjb/e2010-10478-0

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