High performance silicene nanoribbon field effect transistors with current saturation

Hong Li, Lu Wang, Qihang Liu, Jiaxin Zheng, Wai-Ning Mei, Zhengxiang Gao, Junjie Shi and Jing Lu ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2012, vol. 85, issue 8, 1-6

Abstract: We investigate field effect transistors (FETs) based on semiconducting armchair-edged silicene nanoribbons (ASiNRs) by using ab initio quantum transport calculations. These FETs have high performance with an I on /I off ratio of over 10 6 and a subthreshold swing as small as 90 mV/decade. Impressively, the output characteristic shows a saturation behavior. The drain-current saturation is an advantage with respect to device speed, but it’s usually absent in carbon-based (e.g., graphene, graphene nanoribbons, carbon nanotubes, and organic single-molecule) FETs. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2012

Keywords: Solid State and Materials (search for similar items in EconPapers)
Date: 2012
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DOI: 10.1140/epjb/e2012-30220-2

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