Electron tunneling in a vertical graphene heterostructure

Yonghong Yan () and Hui Zhao

The European Physical Journal B: Condensed Matter and Complex Systems, 2013, vol. 86, issue 4, 1-4

Abstract: We theoretically investigate electron tunneling through a dual-gated graphene heterostructure, in which a thin barrier layer is sandwiched between two graphene layers. We show that the perfect tunneling of electrons presented in a single layer of graphene (also known as Klein tunneling) could be broken in this structure. Moreover, the structure could exhibit a large switching ratio of current, indicating the architecture may be promising for future electronic devices. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Keywords: Mesoscopic and Nanoscale Systems (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1140/epjb/e2013-30833-9

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