Formation of bcc-Ni thin film on GaAs(100) substrate and phase transformation from bcc to fcc

Mitsuru Ohtake (), Masaaki Futamoto and Nobuyuki Inaba

The European Physical Journal B: Condensed Matter and Complex Systems, 2013, vol. 86, issue 5, 1-7

Abstract: Ni thin films are prepared on GaAs(100) single-crystal substrates at room temperature by using an ultra-high vacuum radio-frequency magnetron sputtering system. The growth behavior and the crystallographic properties are studied by in-situ refection highenergy electron diffraction and pole-figure X-ray diffraction. In an early stage of film growth, a metastable bcc Ni(100) single-crystal film is formed on GaAs(100) substrate, where the bcc structure is stabilized through hetero-epitaxial growth. With increasing the film thickness, fcc crystals coexist with the bcc(100) crystal. High-resolution cross-sectional transmission electron microscopy shows that the film consists of a mixture of bcc and fcc crystals and that a large number of planar faults exist parallel to the fcc(111) close-packed plane. The results indicate that the bcc structure starts to transform into fcc structure through atomic displacement parallel to the bcc{110} close-packed planes. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Date: 2013
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DOI: 10.1140/epjb/e2013-30675-5

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