Interface-engineered resistive switching in Ag/SrTiO 3 /Nd 0.7 Ca 0.3 MnO 3 /YBa 2 Cu 3 O 7 heterostructures

Daniel Hsu, Yu-Han Tsai, Zhongwen Xing () and Jauyn Lin ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2013, vol. 86, issue 6, 1-4

Abstract: For Ag/Nd 0.7 Ca 0.3 MnO 3 /YBa 2 Cu 3 O 7 (Ag/NCMO/YBCO) heterostructures, we investigate effects of an SrTiO 3 (STO) buffer layer inserted into the Ag/NCMO interface upon the room-temperature resistive switching. In comparison with the non-buffered (Ag/NCMO/YBCO) structure, the insertion of the STO buffer layer can greatly enhance the electric-field-induced-resistance (EPIR) effect. The STO-buffered (Ag/STO/NCMO/ YBCO) device can be switched on-and-off between the higher to lower resistance states at an EPIR ratio of 253% with pulsed voltage ±1.5 V and 405% with pulsed voltage ±3.0 V. The enhanced EPIR ratio is attributed to a combined effect of the migration of oxygen vacancies near the interface and ferroelectric polarization of the STO buffer. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Keywords: Solid State and Materials (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1140/epjb/e2013-30762-7

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