Charge storage behavior of nanostructures based on SiGe nanocrystals embedded in Al 2 O 3 matrix

Eliana Vieira, Sergey Levichev (), Carlos Dias, Rui Igreja, Maja Buljan, Sigrid Bernstorff, Olinda Conde, Adil Chahboun, Anabela Rolo and Maria Gomes

The European Physical Journal B: Condensed Matter and Complex Systems, 2013, vol. 86, issue 7, 1-7

Abstract: The charge storage behavior of nanostructures based on Si 1−x Ge x (0 ≤ x ≤ 1) nanocrystals (NCs) in an Al 2 O 3 matrix was investigated. The structures have been grown by RF magnetron sputtering and subsequently annealed at temperatures ranging from 700 °C to 1000 °C for 30 min in nitrogen ambient. The stoichiometry of the SiGe NCs and the alumina crystalline structure were found to be significantly dependent on the RF power and the annealing temperature. The sizes of the SiGe NCs and their distribution were investigated by grazing incidence small angle X-ray scattering (GISAXS). The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed to investigate the charge trapping characteristics of the memory structures. The C-V hysteresis width depends on variations in the crystalline structure resulting from different annealing temperatures. It is also shown that charge injection is governed by the Fowler-Nordheim tunnel mechanism for higher electric fields. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2013

Keywords: Solid State and Materials (search for similar items in EconPapers)
Date: 2013
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DOI: 10.1140/epjb/e2013-40124-2

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