Spectroscopic fingerprints for charge localization in the organic semiconductor (DOEO) 4 [HgBr 4 ]·TCE

Oksana Koplak, Alisa Chernenkaya (), Katerina Medjanik, Alberto Brambilla, Andrei Gloskovskii, Alberto Calloni, Hans-Joachim Elmers, Gerd Schönhense, Franco Ciccacci and Roman Morgunov

The European Physical Journal B: Condensed Matter and Complex Systems, 2015, vol. 88, issue 5, 1-9

Abstract: Changes of the electronic structure accompanied by charge localization and a transition to an antiferromagnetic ground state were observed in the organic semiconductor (DOEO) 4 [HgBr 4 ]·TCE. Localization starts in the temperature region of about 150 K and the antiferromagnetic state occurs below 60 K. The magnetic moment of the crystal contains contributions of inclusions (droplets), and individual paramagnetic centers formed by localized holes and free charge carriers at 2 K. Two types of inclusions of 100–400 nm and 2–5 nm sizes were revealed by transmission electron microscopy. Studying the temperature- and angular dependence of electron spin resonance (ESR) spectra revealed fingerprints of antiferromagnetic contributions as well as paramagnetic resonance spectra of individual localized charge carriers. The results point on coexistence of antiferromagnetic long and short range order as evident from a second ESR line. Photoelectron spectroscopy in the VUV, soft and hard X-ray range shows temperature-dependent effects upon crossing the critical temperatures around 60 K and 150 K. The substantially different probing depths of soft and hard X-ray photoelectron spectroscopy yield information on the surface termination. The combined investigation using complementary methods at the same sample reveals the close relation of changes in the transport properties and in the energy distribution of electronic states. Copyright EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg 2015

Keywords: Solid State and Materials (search for similar items in EconPapers)
Date: 2015
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DOI: 10.1140/epjb/e2015-50837-7

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