Nonlinear optical properties of asymmetric n-type double δ-doped GaAs quantum well under intense laser field

Huseyin Sari, Esin Kasapoglu, Unal Yesilgul, Serpil Sakiroglu, Fatih Ungan () and Ismail Sökmen
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Huseyin Sari: Faculty of Education, Department of Mathematical and Science Education, Cumhuriyet University
Esin Kasapoglu: Faculty of Science, Department of Physics, Cumhuriyet University
Unal Yesilgul: Faculty of Technology, Department of Optical Engineering, Cumhuriyet University
Serpil Sakiroglu: Faculty of Science, Department of Physics, Dokuz Eylül University
Fatih Ungan: Faculty of Technology, Department of Optical Engineering, Cumhuriyet University
Ismail Sökmen: Faculty of Science, Department of Physics, Dokuz Eylül University

The European Physical Journal B: Condensed Matter and Complex Systems, 2017, vol. 90, issue 9, 1-6

Abstract: Abstract The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double δ-doped GaAs quantum well is theoretically investigated. The confined energy levels and corresponding wave functions of this structure are calculated by solving the Schrödinger equation in the laser-dressed confinement potential within the framework of effective mass approximation. The optical responses are reported as a function of the δ-doped impurities density and the applied non-resonant intense laser field. Additionally, the calculated results also reveal that the non-resonant intense laser field can be used as a way to control the electronic and optical properties of the low dimensional semiconductor nano-structures.

Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2017
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DOI: 10.1140/epjb/e2017-80210-9

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