Ion beam sputter deposition of TiO2 films using oxygen ions

Lukas Pietzonka, Thomas Lautenschläger, Daniel Spemann, Annemarie Finzel, Jürgen W. Gerlach, Frank Frost and Carsten Bundesmann ()
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Lukas Pietzonka: Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM)
Thomas Lautenschläger: Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM)
Daniel Spemann: Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM)
Annemarie Finzel: Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM)
Jürgen W. Gerlach: Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM)
Frank Frost: Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM)
Carsten Bundesmann: Leibniz-Institut für Oberflächenmodifizierung e.V. (IOM)

The European Physical Journal B: Condensed Matter and Complex Systems, 2018, vol. 91, issue 10, 1-10

Abstract: Abstract TiO2 thin films were grown by ion beam sputter deposition (IBSD) using oxygen ions, with the ion energy and geometrical parameters (ion incidence angle, polar emission angle, and scattering angle) being varied systematically. Metallic Ti and ceramic TiO2 served as target materials. The thin films were characterized concerning thickness, growth rate, surface topography, structural properties, mass density, and optical properties. It was found that the scattering geometry has the main impact on the film properties. Target material, ion energy, and ion incidence angle have only a marginal influence. Former studies on reactive IBSD of TiO2 using Ar and Xe ions reported equivalent patterns. Nevertheless, the respective ion species distinctively affects the film properties. For instance, mass density and the refractive index of the TiO2 thin films are remarkably lower for sputtering with oxygen ions than for sputtering with Ar or Xe ions. The variations in the thin film properties are tentatively attributed to the angular and the energy distribution of the film-forming particles, especially, to those of the backscattered primary particles.

Date: 2018
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DOI: 10.1140/epjb/e2018-90293-3

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