Band gap modulation of graphene on SiC

Stefan Kolev (), Victor Atanasov, Hristiyan Aleksandrov and Teodor Milenov
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Stefan Kolev: Institute of Electronics–Bulgarian Academy of Sciences
Victor Atanasov: Faculty of Physics, Sofia University
Hristiyan Aleksandrov: Faculty of Chemistry and Pharmacy, Sofia University
Teodor Milenov: Institute of Electronics–Bulgarian Academy of Sciences

The European Physical Journal B: Condensed Matter and Complex Systems, 2018, vol. 91, issue 11, 1-7

Abstract: Abstract A recipe on how to engineer a band gap in the energy spectrum for the carriers in graphene is conveyed. It is supported by a series of numerical simulations inspired by an analytical result based on the opening of a band gap in periodically corrugated graphene, e.g. the buffer layer grown on SiC at high temperatures.

Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1140/epjb/e2018-90154-1

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