Comparison of external electric and magnetic fields effect on binding energy of hydrogenic donor impurity in different shaped quantum wells
Min Hu,
Hailong Wang (),
Qian Gong and
Shumin Wang
Additional contact information
Min Hu: Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University
Hailong Wang: Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University
Qian Gong: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
Shumin Wang: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
The European Physical Journal B: Condensed Matter and Complex Systems, 2018, vol. 91, issue 1, 1-7
Abstract:
Abstract The effects of external electric and magnetic fields on the ground state binding energy of hydrogenic donor impurity are compared in square, V-shaped, and parabolic quantum wells. With the effective-mass envelope-function approximation theory, the ground state binding energies of hydrogenic donor impurity in InGaAsP/InP QWs are calculated through the plane wave basis method. The results indicate that as the quantum well width increases, the binding energy changes most fast in SQW. When the well width is fixed, the binding energy is the largest in VQW for the donor impurity located near the center of QWs. For the smaller and larger well width, the electric field effect on binding energy is the most significant in VQW and SQW, respectively. The magnetic field effect on binding energy is the most significant in VQW. The combined effects of electric and magnetic fields on the binding energy of hydrogenic donor impurity are qualitative consistent in different shaped QWs.
Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2018
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DOI: 10.1140/epjb/e2017-80358-2
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