Electrical and material properties of hydrothermally grown single crystal (111) UO2

Christina L. Dugan (), George Glenn Peterson, Alyssa Mock, Christopher Young, J. Matthew Mann, Michael Nastasi, Mathias Schubert, Lu Wang, Wai-Ning Mei, Iori Tanabe, Peter A. Dowben and James Petrosky
Additional contact information
Christina L. Dugan: Air Force Institute of Technology
George Glenn Peterson: University of Nebraska, Walter Scott Engineering Center
Alyssa Mock: University of Nebraska, Walter Scott Engineering Center
Christopher Young: Air Force Institute of Technology
J. Matthew Mann: Air Force Research Laboratory
Michael Nastasi: Air Force Institute of Technology
Mathias Schubert: University of Nebraska, Walter Scott Engineering Center
Lu Wang: CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China
Wai-Ning Mei: University of Nebraska at Omaha
Iori Tanabe: CAS Key Lab of Materials for Energy Conversion, Department of Materials Science and Engineering, University of Science and Technology of China
Peter A. Dowben: University of Nebraska-Lincoln
James Petrosky: Air Force Institute of Technology

The European Physical Journal B: Condensed Matter and Complex Systems, 2018, vol. 91, issue 4, 1-7

Abstract: Abstract The semiconductor and optical properties of UO2 are investigated. The very long drift carrier lifetimes, obtained from current–voltage I(V) and capacitance–voltage C(V) measurements, along with the well-defined optical properties provide little evidence of an abundance of material defects away from the surface region. Schottky barrier formation may be possible, but very much dependent on the choice of contact and surface stoichiometry and we find that Ohmic contacts are in fact favored. Depth resolved photoemission provided evidence of a chemical shift at the surface. Density functional theory, with the Heyd-Scuseria-Ernzerhof (HSE) functional, indicates a band gap of a 2.19 eV and an anti-ferromagnetic ground state. Ellipsometry measurements indicates at UO2 is relatively isotropic with a band gap of approximately 2.0 eV band gap, consistent with theoretical expectations.

Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2018
References: View complete reference list from CitEc
Citations: View citations in EconPapers (1)

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DOI: 10.1140/epjb/e2018-80489-x

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