Effects of heteroatom (B or N)-doping on the electronic and transport properties of armchair silicene nanoribbon
Zhiyong Wang (),
Jingjin Chen,
Shuai Yang,
Jianrong Xiao and
Mengqiu Long
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Zhiyong Wang: College of Science, Guilin University of Technology
Jingjin Chen: College of Science, Guilin University of Technology
Shuai Yang: College of Science, Guilin University of Technology
Jianrong Xiao: College of Science, Guilin University of Technology
Mengqiu Long: Hunan Key Laboratory of Super Micro-structure and Ultrafast Process, Central South University
The European Physical Journal B: Condensed Matter and Complex Systems, 2019, vol. 92, issue 11, 1-6
Abstract:
Abstract We investigate the effects of heteroatom (boron or nitrogen atom)-doping on the electronic and transport properties of armchair silicene nanoribbon by means of the First-principles method. The calculated results show that the bandgap of armchair silicene nanoribbons (ASiNRs) can be modulated by changing the distance between two doping sites. The ASiNRs appear the semi-metallic property with two boron atoms doping, while the ASiNRs transform from semiconducting to metallic property with two nitrogen atoms doping. It can be found that the bandgaps of ASiNRs are decreasing with the increasing distance between boron atom and nitrogen atom. The transport properties of ASiNRs with B/N codoping are also investigated, the differential conductance appears an oscillatory behavior, it is hoped that it may be useful for designing the silicene-based electronic devices. Graphical abstract
Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2019
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DOI: 10.1140/epjb/e2019-100279-0
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