Electron transport in bulk n-doped 3C-SiC by using a non-equilibrium quantum kinetic theory

Amanda M. D. Corrêa, Clóves G. Rodrigues () and Roberto Luzzi
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Amanda M. D. Corrêa: School of Exact Sciences and Computing, Pontifical Catholic University of Goiás
Clóves G. Rodrigues: School of Exact Sciences and Computing, Pontifical Catholic University of Goiás
Roberto Luzzi: Condensed Matter Physics Department, Institute of Physics “Gleb Wataghin”, State University of Campinas-Unicamp

The European Physical Journal B: Condensed Matter and Complex Systems, 2019, vol. 92, issue 11, 1-6

Abstract: Abstract In this paper we present a study on the charge transport in bulk n-type doped semiconductor 3C-SiC (in both, transient and steady state) using a non-equilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the applied electric field of the basic macrovariables: the “electron drift velocity” and the “non-equilibrium temperature”. The “peak points” in time evolution of this macrovariables are derived and analyzed. Graphical abstract

Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2019
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DOI: 10.1140/epjb/e2019-100316-0

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