Tunneling spectrum in triplet p-wave superconductor-silicene junctions

Hong Li () and Xinjian Yang
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Hong Li: College of Science, China University of Petroleum
Xinjian Yang: College of Science, China University of Petroleum

The European Physical Journal B: Condensed Matter and Complex Systems, 2019, vol. 92, issue 12, 1-7

Abstract: Abstract The tunneling spectrum in normal/triplet p-wave superconductor (N/pS)-undoped and doped silicene junction is studied based on Blonder-Tinkham-Klapwijk (BTK) theory. Three kinds of pairings for pS are chosen: px, py, px + ipywaves. It is found that the normalized conductance (NC) strongly depends on the kind of pairings, the insulating gap which varies in magnitude with an applied electric field (Ez) and the chemical potential in the normal silicene region. For N/pS-undoped silicene junctions, the Andreev reflection (AR) and the NC can be switched on or off by the applied electric field while the transport can occur for all the bias voltage in doped silicene junctions. A sharp zero-bias conductance peak (ZBCP) is obtained in N/pS-doped silicene junction that is independent of the values of the insulating gap of silicene and distinctly different from the normal/d-wave superconductor-silicene junctions. In addition, for N/pxS-silicene junctions the NC exhibits a double-minimum structure when the bias voltage eV = 0.8Δ0 with Δ0 the zero-temperature energy gap of pS while a little peak appears for N/pyS case. In N/px+ipyS-silicene junctions a sharp peak and a conductance dip appear at eV = 0.8Δ0 and eV = Δ0, respectively. It is hoped that the results obtained may guide the design of silicene devices. Graphical abstract

Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2019
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DOI: 10.1140/epjb/e2019-100529-1

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