Temperature- and diameter-dependent electrical conductivity of nitrogen doped ZnO nanowires

Shu-Long Li, Xiao-Xia Yu, Ya-Lin Li, Pei Gong, Ya-Hui Jia, Xiao-Yong Fang () and Mao-Sheng Cao ()
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Shu-Long Li: Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University
Xiao-Xia Yu: School of Aerospace Engineering, Beijing Institute of Technology
Ya-Lin Li: Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University
Pei Gong: Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University
Ya-Hui Jia: Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University
Xiao-Yong Fang: Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University
Mao-Sheng Cao: School of Materials Science and Engineering, Beijing Institute of Technology

The European Physical Journal B: Condensed Matter and Complex Systems, 2019, vol. 92, issue 7, 1-7

Abstract: Abstract A modified formula to calculate the axial conductivity of nanowires was proposed based on the one-dimensional quantum state density distribution and Boltzmann transport theory. Numerical simulations of the ZnO nanowires (ZnONWs) and Nitrogen-doped ZnO nanowires (N-ZnONWs) were implemented using data from the first principles calculation. The results indicate that ZnONWs are low-conductivity wide band-gap semiconductors owing to their low carrier concentrations at room temperature, with N-doping increasing the conductivity. The N-ZnONWs carrier concentrations increased with increasing temperature, and possessed significantly higher carrier concentrations than ZnONWs. With an increase in diameter, the ZnONWs conductivities increased, whereas the N-ZnONWs conductivities decreased. Graphical abstract

Keywords: Mesoscopic; and; Nanoscale; Systems (search for similar items in EconPapers)
Date: 2019
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DOI: 10.1140/epjb/e2019-100208-3

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