2D Hexagonal SnTe monolayer: a quasi direct band gap semiconductor with strain sensitive electronic and optical properties

Negin Fatahi, D. M. Hoat (), Amel Laref, Shorin Amirian, A. H. Reshak and Mosayeb Naseri
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Negin Fatahi: Kermanshah Branch, Islamic Azad University
D. M. Hoat: Computational Laboratory for Advanced Materials and Structures, Advanced Institute of Materials Science, Ton Duc Thang University
Amel Laref: Department, College of Science, King Saud University
Shorin Amirian: Kermanshah Branch, Islamic Azad University
A. H. Reshak: Physics Department, College of Science, Basrah University
Mosayeb Naseri: Kermanshah Branch, Islamic Azad University

The European Physical Journal B: Condensed Matter and Complex Systems, 2020, vol. 93, issue 2, 1-7

Abstract: Abstract The stability and electronic and optical properties of two-dimensional (2D) SnTe monolayer has been systematically studied by using first-principles calculations based on density functional theory. Our computations demonstrate that the predicted 2D SnTe monolayer is a stable quasi-direct semiconductor. Also, analysis of its electronic property shows that the ground state of this monolayer is a quasi-direct semiconductor with a band gap of ~2.00. This band gap can be effectively modulated by external strains. Investigation of optical properties shows that monolayer SnTe exhibits significant absorption and reflectivity in the ultraviolet region of the electromagnetic spectrum. Graphical abstract

Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1140/epjb/e2020-100543-6

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