Electron-hole asymmetry in electrical conductivity of low-fluorinated graphene: numerical study

Dmitry V. Kolesnikov () and Vladimir A. Osipov
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Dmitry V. Kolesnikov: Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research
Vladimir A. Osipov: Bogoliubov Laboratory of Theoretical Physics, Joint Institute for Nuclear Research

The European Physical Journal B: Condensed Matter and Complex Systems, 2020, vol. 93, issue 4, 1-7

Abstract: Abstract By using the real-space Green-Kubo formalism we study numerically the electron transport properties of low-fluorinated graphene. At low temperatures the diffuse transport regime is expected to be prevalent, and we found a pronounced electron-hole asymmetry in electrical conductivity as a result of quasi-resonant scattering on the localized states. For the finite temperatures in the variable-range hopping transport regime the interpretation of numerical results leads to the appearance of local minima and maxima of the resistance near the energies of the localized states. A comparison with the experimental measurements of the resistance in graphene samples with various fluorination degrees is discussed. Graphical abstract

Keywords: Solid; State; and; Materials (search for similar items in EconPapers)
Date: 2020
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DOI: 10.1140/epjb/e2020-100508-3

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