Peculiarities of recrystallization activated by a diffusion flow of an impurity from a thin-film coating

S. E. Savotchenko ()
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S. E. Savotchenko: Belgorod State Technological University Named After V.G. Shukhov

The European Physical Journal B: Condensed Matter and Complex Systems, 2021, vol. 94, issue 9, 1-8

Abstract: Abstract We propose new model of recrystallization activated by a diffusion flux of impurity atoms from a thin coating of the surface of a metal sample. The model is based on diffusion equation with a stepwise diffusion coefficient and moving boundary corresponding to the front of recrystallization. We obtain the explicit exact solution of the problem formulated, which describes the distribution of impurity concentration. We derive the analytical dependences of the depth of the recrystallized layer and recrystallization rate on time within the framework of the formulated model. The results obtained agree with the fact that the process of migration of grain boundaries, which causes recrystallization, develops under conditions of constant feeding of the boundaries by impurities diffusing from the surface. Graphic abstract

Date: 2021
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DOI: 10.1140/epjb/s10051-021-00203-x

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