A computational investigation to tune the optical gain in AlSb/InGaAsSb/AlSb type-I quantum well heterostructure

Md. Riyaj, Amit Rathi () and Pushpalata
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Md. Riyaj: Bhagalpur College of Engineering
Amit Rathi: Manipal University Jaipur
Pushpalata: Bhagalpur College of Engineering

The European Physical Journal B: Condensed Matter and Complex Systems, 2022, vol. 95, issue 10, 1-11

Abstract: Abstract GaSb-based type-I heterostructure exhibited low optical gain hence further investigations are needed to study the technique for tuning the optical gain characteristics. In this paper, the main emphasis has been given to studying the optical gain characteristics and lasing wavelength of GaSb-based Type-I AlSb/InGaAsSb/AlSb heterostructure under uniaxial strain (0–8 GPa) the variable well width ranging from 2.5 to 4.5 nm and carrier density ranging from 5 × 1012 cm−2 to 9 × 1012 cm−2at room temperature. It was observed that the wider quantum well width can enhance the optical gain with redshift in wavelength. For the proposed heterostructure maximum optical gain is achieved when the quantum well size is 4.5 nm and carrier concentration is 9 × 1012 cm−2. The calculations were performed using the two-band k.p model and Fermi Golden Rules. Computational analysis suggests that the designed heterostructure is compatible as an optical source in the telecom window of optical fiber communication. Graphical abstract 1 a Pressure, b well width (TM mode) dependence of optical gain as a function of wavelength of AlSb/InGaAsSb/AlSb heterostructure. 2 Well width dependence of optical gain as a function of wavelength within TE mode a 5 × 1012/cm2, b 9 × 101212/cm2 of AlSb/InGaAsSb/AlSb heterostructure

Date: 2022
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DOI: 10.1140/epjb/s10051-022-00434-6

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