Combined effects of hydrostatic pressure and electric field on the donor binding energy, polarizability, and photoionization cross-section in double GaAs/Ga $$_{1-x}$$ 1 - x Al $$_{x}$$ x As quantum dots

Ayoub Ed-Dahmouny (), Ahmed Sali, Najia Es-Sbai, Reda Arraoui, Mohammed Jaouane, Abdelghani Fakkahi, Kamal El-Bakkari and C. A. Duque
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Ayoub Ed-Dahmouny: Sidi Mohamed Ben Abdellah University
Ahmed Sali: Sidi Mohamed Ben Abdellah University
Najia Es-Sbai: Sidi Mohamed Ben Abdellah University
Reda Arraoui: Sidi Mohamed Ben Abdellah University
Mohammed Jaouane: Sidi Mohamed Ben Abdellah University
Abdelghani Fakkahi: Sidi Mohamed Ben Abdellah University
Kamal El-Bakkari: Sidi Mohamed Ben Abdellah University
C. A. Duque: Universidad de Antioquia UdeA

The European Physical Journal B: Condensed Matter and Complex Systems, 2022, vol. 95, issue 8, 1-10

Abstract: Abstract The present work focuses on the theoretical calculations of the ground-state binding energy of a shallow impurity, the impurity-related photoionization cross-section (PICS), and impurity-related polarizability under the combined effects of an electric field and hydrostatic pressure using a variational approach within the parabolic-band and effective-mass approximations. The low heterostructure is made up of two GaAs quantum dots separated by a Al $$_{0.3}$$ 0.3 Ga $$_{0.7}$$ 0.7 As central barrier. The applied electric field is considered to be directed along the growth-direction. As a general, the binding energy is obtained as a function of the impurity position and the electric field intensity. The PICS is calculated as a function of photon energy, for various impurity positions, with changes in hydrostatic pressure and/or electric field strength to prove their impact on their magnitude and shifting. Calculations are without accounting for the $$\Gamma -X$$ Γ - X effect of the GaAs/Al $$_{0.3}$$ 0.3 Ga $$_{0.7}$$ 0.7 As and for a specific nanostructure size. In addition, we have shown how variations in hydrostatic pressure and electric field affect the polarizability of impurities at three distinct places in the nanostructure. Graphical abstract

Date: 2022
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DOI: 10.1140/epjb/s10051-022-00400-2

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