The enhancement of magnetism and the occurrence of phase transition in Fe doped g-C3N4 nanoribbons

Zhihao Wang, Xue Jiang, Dong Fan, Hengshuai Li (), Xipeng Pu (), Haiquan Hu, Feng Guo, Zhenbao Feng, Jun Li, Dong Zhang, Xiaocheng Hu, Maoye Yin, Minghui Zhu and Zhi Li
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Zhihao Wang: Liaocheng University
Xue Jiang: Liaocheng University
Dong Fan: Liaocheng University
Hengshuai Li: Liaocheng University
Xipeng Pu: Liaocheng University
Haiquan Hu: Liaocheng University
Feng Guo: Liaocheng University
Zhenbao Feng: Liaocheng University
Jun Li: Liaocheng University
Dong Zhang: Liaocheng University
Xiaocheng Hu: Liaocheng University
Maoye Yin: Liaocheng University
Minghui Zhu: Liaocheng University
Zhi Li: Liaocheng University

The European Physical Journal B: Condensed Matter and Complex Systems, 2023, vol. 96, issue 11, 1-8

Abstract: Abstract Two-dimensional graphene-like materials have numerous pores, large surface areas, and other excellent properties. And two-dimensional graphene-like materials have great potential in magnetic and spintronic devices. In this paper, we intercepted a fraction of g-C3N4 and prepared it into nanoribbons. We have calculated the g-C3N4 nanoribbons by studying the electronic structure of g-C3N4 nanoribbons to determine whether they can be used as spintronic and magnetic memory devices. Because the g-C3N4 nanoribbons have a narrow band gap and more overlapping wave functions, to turn the performance of the g-C3N4 nanoribbons, it was decided to dope transition metal Fe atoms. Subsequently, we found that the doped g-C3N4 nanoribbons with Fe atoms undergo a phase transition, from semiconducting property to half-metallic property, and the magnetic property of the g-C3N4 nanoribbons is enhanced by doped Fe atoms, so the performance of the g-C3N4 nanoribbons was improved. Graphical abstract

Date: 2023
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DOI: 10.1140/epjb/s10051-023-00607-x

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