Strain induced variations in transport and optical properties of SrVO3: a DFT + U study

Maitreyo Biswas, Debolina Misra () and Tarun K. Kundu
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Maitreyo Biswas: Indian Institute of Technology Kharagpur
Debolina Misra: Indian Institute of Information Technology, Design and Manufacturing
Tarun K. Kundu: Indian Institute of Technology Kharagpur

The European Physical Journal B: Condensed Matter and Complex Systems, 2023, vol. 96, issue 6, 1-9

Abstract: Abstract First-principles calculations based on density functional theory + Hubbard U (DFT + U) approach have been carried out to study the strain induced variations in the optical and transport properties of the correlated perovskite SrVO3. By virtue of its conductivity, high carrier mobility and optical transparency, SrVO3 can be used as a potential replacement of indium tin oxide (ITO) as a transparent conductor. As strain tuning is an effective way to tune the electron–electron correlations in correlated oxides, the epitaxial strain induced variations in V-3d bandwidth, band center shift and band splitting at high symmetry points (Γ, R) in SrVO3 are investigated. The alterations in resistivity, carrier concentration, Hall coefficient and plasma frequency with applied strain are also elucidated. Our calculations revealed that under tensile strain, the lifting of the threefold degeneracy of 3d-t2g orbital and d-band narrowing reinforces a relatively less conducting state thus limiting the ωP to lower frequencies. On the contrary, in case of compressive strain the d-band widening predominates leading to an increase in carrier concentration and decrease in resistivity enhancing the metallic state. As a result, ωP is increased to higher frequencies which decreases the optical transparency window. Hence, our results and findings clearly demonstrate the interdependence between the optical and transport properties, and provides a detailed mechanism to tune the optoelectronic properties of SrVO3 for its applications as a transparent conducting oxide. Graphical abstract

Date: 2023
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DOI: 10.1140/epjb/s10051-023-00547-6

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