Electron eigenvalues in quantum well of AlAs/InxGa1−xAs/AlAs heterostructures with InAs nanoinserts

Paziljon Baymatov (), Bakhrom Abdulazizov () and Makhmudjon Tokhirjonov ()
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Paziljon Baymatov: Namangan State University
Bakhrom Abdulazizov: Namangan State University
Makhmudjon Tokhirjonov: Namangan State University

The European Physical Journal B: Condensed Matter and Complex Systems, 2023, vol. 96, issue 8, 1-7

Abstract: Abstract The paper presents the results of studying the nature of the energy levels of an electron in a quantum well of heterostructures AlAs/InxGa1−xAs/AlAs containing a thin InAs nanolayer. The dependences of these energy levels on the thickness En(b) of the InAs layer are analysed by numerical and analytical methods. An analytical formula for the dependence En(b) is obtained in the model of an infinitely deep well. The dependence of the energy levels on the thickness b of the InAs nanolayer found in the model of parabolic bands turned out to be strong and complex. In the model of nonparabolic bands, due to the growth of the electron mass with respect to energy, the number of energy levels in the well increased, and the En(b) dependences were noticeably suppressed. The nature and causes of these regularities are analysed. Graphical abstract Conduction band profile of AlAs/Inx Ga1−x As/InAs/InxGa1−xAs/AlAs (x = 0.53) heterostructures

Date: 2023
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DOI: 10.1140/epjb/s10051-023-00586-z

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