Probing electron localization and delocalization in the selective long-range tight-binding model

Mohammad Pouranvari ()
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Mohammad Pouranvari: University of Mazandaran

The European Physical Journal B: Condensed Matter and Complex Systems, 2024, vol. 97, issue 10, 1-9

Abstract: Abstract In this study, we perform a detailed investigation into the interplay between disorder-induced electron localization and long-range hopping amplitudes within the Selective Long-Range Tight-Binding Model (SLRTB). Through numerical simulations, we analyze the electronic properties of the system, with a focus on the participation ratio (PR), entanglement entropy (EE), energy spectrum, and the ratio of level spacings ( $$r_n$$ r n ). Our results reveal a marked distinction between negative and positive long-range hopping amplitudes, manifesting in different electronic behaviors and transitions. Notably, we carry out a finite-size scaling analysis, identifying the critical point and exponents that characterize the system’s behavior near the transition. The investigation highlights the role of gapless regions in shaping the system’s PR, $$r_n$$ r n , and EE, and the influence of disorder on these properties. The SLRTB model proves to be an effective framework for understanding the effects of disorder and long-range hopping on electron dynamics, offering valuable insights into localization and delocalization phenomena. Graphical abstract

Date: 2024
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DOI: 10.1140/epjb/s10051-024-00802-4

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