Robust photogalvanic effect in the armchair B2C4P2 photodetector by vacancy and substitution-doping

Xi Fu (), Jian Lin, Wenhu Liao, Jiyuan Guo and Xiaowu Li ()
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Xi Fu: Hunan University of Science and Engineering
Jian Lin: Jishou University
Wenhu Liao: Jishou University
Jiyuan Guo: Jiangsu University of Science and Technology
Xiaowu Li: Hunan University of Science and Engineering

The European Physical Journal B: Condensed Matter and Complex Systems, 2024, vol. 97, issue 1, 1-8

Abstract: Abstract In this study, we investigated the linear photogalvanic effect (PGE) phenomena in an armchair photodetector device based on the B2C4P2 monolayer, which was predicted and studied in a previous work (J Phys Chem Lett 12:3436–3442, 2021). The produced photocurrents show a cosine relation with the incident angles, and the vacancies and substitution-doping can significantly enhance the photocurrents generated and form robust PGEs due to the incremental asymmetry in the B2C4P2 photodetector. Additionally, the armchair B2C4P2 photodetector possesses a very high extinction ratio corresponding to a more sensitive polarization detection. This work demonstrates that the B2C4P2 monolayer can be used as the high-performance PGE-driven photodetector in low-energy-consumption optoelectronics devices. Graphical abstract Robust photogalvanic effect (PGE) phenomena and very high extinction ratio have been produced in the armchair B2C4P2 photodetector with the vacancies and substitution-doping included.

Date: 2024
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DOI: 10.1140/epjb/s10051-023-00632-w

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