Temperature dependence of photoconductivity in layered semiconductor p-GaSe

T. G. Naghiyev (), R. F. Babayeva and Y. I. Aliyev
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T. G. Naghiyev: Composite Materials Scientific Research Center of Azerbaijan State Univeristy of Economics (UNEC)
R. F. Babayeva: Composite Materials Scientific Research Center of Azerbaijan State Univeristy of Economics (UNEC)
Y. I. Aliyev: Western Caspian University

The European Physical Journal B: Condensed Matter and Complex Systems, 2024, vol. 97, issue 6, 1-6

Abstract: Abstract The temperature dependence of photoconductivity in p-GaSe crystals with different initial (having at 77 K) dark resistivities (ρ77 = 2·103 ÷ 7·106 Ω·cm) was experimentally studied in the temperature range of 77 ÷ 300 K. It has been established that in crystals with ρ77

Date: 2024
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DOI: 10.1140/epjb/s10051-024-00731-2

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