Subtle modulation of the nonlinear optical properties of GaAs quantum dot by the interplay between noise and impurity extension

Bhaskar Bhakti, Swarnab Datta, Anuja Ghosh and Manas Ghosh ()
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Bhaskar Bhakti: Visva-Bharati University
Swarnab Datta: Eklavya Model Residential School
Anuja Ghosh: Indian Institute of Technology
Manas Ghosh: Visva-Bharati University

The European Physical Journal B: Condensed Matter and Complex Systems, 2025, vol. 98, issue 2, 1-14

Abstract: Abstract Current enquiry puts emphasis on unveiling the role of subtle interplay between spatial dissemination of impurity and Gaussian white noise on a few nonlinear optical (NLO) properties of the doped GaAs quantum dot (QD). The NLO properties include group index (GI), DC-Kerr effect (DCKE), electro-absorption coefficient (EAC) and optical gain (OG). GI, DCKE and EAC manifest red-shift with the enhancement of the spatial width of the dopant, both including and excluding noise. In case of OG, however, both with and without noise, the peak shift becomes non-uniform as the dopant stretch increases. The interplay between noise and the impurity spread becomes different for additive and multiplicative noise. Delicate modulation of impurity spread, in combination with the mode of introduction of noise, can control the regimes of fast and slow light in the system, the magnitudes of DCKE and EAC and can even cause maximization of OG and the current density in the vicinity of some typical spatial spread of the dopant. Graphical abstract

Date: 2025
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DOI: 10.1140/epjb/s10051-025-00880-y

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