Consequence of magnetic field, controlling metrics of potential on intrinsic electro-optical properties of an exciton: Pöschl–Teller potential vs. Razavy potential

M. Kavitha, A. Naifar, A. John Peter () and V. Raja
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M. Kavitha: NMS Sermathai Vasan College for Women, Affiliated to Madurai Kamaraj University, Madurai
A. Naifar: (I.P.E.I.K) University of Kairouan
A. John Peter: Government Arts College, Affiliated to Madurai Kamaraj University, Madurai
V. Raja: Government Arts College, Affiliated to Madurai Kamaraj University, Madurai

The European Physical Journal B: Condensed Matter and Complex Systems, 2025, vol. 98, issue 7, 1-15

Abstract: Abstract In this meticulously conducted work, we compare the major consequences of an exciton’s response within a ZnSe/CdSe/ZnSe quantum well under the combined influences of several external determinants (magnetic fields, shapes of included potentials, well widths, and incident illumination). We have numerically tested the decisive parameters describing the shapes of the Pöschl–Teller and Razavy potentials to optimize the wave function and the binding energies. The oscillator strength has been examined in response to the magnetic field, well widths, and potential parameters. The theoretical study also includes the magnetic field associated absorption coefficient and the changes of refractive index. The results show that if the optical strength is relatively large, then the effect of the nonlinear (third-order) term is important and cannot be neglected when investigating the non-linear optical properties in the quantum well. In addition, the single quantum well changes into double quantum well with the magnetic field, 20 T. The structural parameters and the external perturbations decide the characteristic of the quantum well of these potentials. Harnessing the nonlinear optical response of quantum wells provides a robust foundation for developing advanced technologies in optoelectronics and nonlinear plasma interactions in which the field-induced effects and the wave phenomena can be finely tuned to enable next-generation functional devices. Graphical abstract

Date: 2025
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DOI: 10.1140/epjb/s10051-025-00996-1

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