Organic semiconductor spacer thickness-dependent interface defect state spin injection across tunnel magnetoresistance devices

Yadlapalli Sujatha (), Meeniga Srikanth Reddy () and Debajit Deb ()
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Yadlapalli Sujatha: Koneru Lakshmaiah Education Foundation
Meeniga Srikanth Reddy: Koneru Lakshmaiah Education Foundation
Debajit Deb: Koneru Lakshmaiah Education Foundation

The European Physical Journal B: Condensed Matter and Complex Systems, 2025, vol. 98, issue 9, 1-9

Abstract: Abstract This study investigates the effect of organic spacer layer thickness on spin transport in magnetic tunnel junctions (MTJs) of the form $$\hbox {Fe}_{3}\hbox {O}_{4}$$ Fe 3 O 4 /x/Co (x=Rubrene, $$\hbox {C}_{60}$$ C 60 ) with Rubrene and $$\hbox {C}_{60}$$ C 60 as organic spacer layers. The simulation uses a nonequilibrium Green’s function, assuming spin precession at defect states at the ferromagnet/organic semiconductor interface. Parallel and antiparallel resistances have been observed to be thickness-independent at low thicknesses due to excellent magnetic coupling and minimal interfacial imperfections that eventually increased at high thicknesses. Drastic reduction of parallel and antiparallel currents at high-thickness regime has been attributed to the trapping of spins in deeper pinning wells with strong pinning strengthNotably, the rise in tunnel magnetoresistance with thickness is high in $$\hbox {Fe}_{3}$$ Fe 3 O $$_{4}$$ 4 /C $$_{60}$$ 60 /Co device compared to the $$\hbox {Fe}_{3}$$ Fe 3 O $$_{4}$$ 4 /Rubrene/Co device and has been attributed to the change in defect state depth with thickness and electron-predominant nature of $$\hbox {Fe}_{3}$$ Fe 3 O $$_{4}$$ 4 /C $$_{60}$$ 60 /Co device. Therefore, engineering of spacer layer thickness-dependent spin transport in MTJs resulted in successful implementation of organic spacer MTJs for high-performance spintronic memory applications. Graphic abstract

Date: 2025
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DOI: 10.1140/epjb/s10051-025-01031-z

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