A scalable GaN HEMT large-signal model for high-efficiency RF power amplifier design

Yuehang Xu, Wenli Fu, Changsi Wang, Chunjiang Ren, Haiyan Lu, Weibin Zheng, Xuming Yu, Bo Yan and Ruimin Xu

Journal of Electromagnetic Waves and Applications, 2014, vol. 28, issue 15, 1888-1895

Abstract: This paper presents a large-signal empirical model for GaN HEMT devices using an improved Angelov drain current formulation with self-heating effect and a modified non-linear capacitance model. The established model for small gate-width GaN HEMTs is validated by on-wafer load-pull measurements up to 14 GHz. Moreover, a scalable large-signal model is presented by adding scalable parameters to drain-source current and non-linear capacitance equations. The scalable model of a 1.25 mm GaN HEMT has been employed to design a class-AB power amplifier for validation purposes. The results show that good agreement has been achieved between the simulated and measured results with 37.2 dBm saturation output power (Psat) and 58% maximum power-added-efficiency at 3 GHz.

Date: 2014
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DOI: 10.1080/09205071.2014.947440

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