Large-signal output characteristic investigation of the MOSFETs in the breakdown region based on X-parameters
Chie-In Lee,
Wei-Cheng Lin and
Yan-Ting Lin
Journal of Electromagnetic Waves and Applications, 2015, vol. 29, issue 14, 1867-1874
Abstract:
In this paper, large-signal output characteristics of the metal–oxide–semiconductor field-effect transistors in the breakdown region are investigated using X-parameter measurements for the first time. Magnitude of X2121T$ X_{{2121}}^{T} $ coefficients can be larger than the result of X2121s$ X_{{2121}}^{s} $ coefficients at high input power as drain voltage increases to the breakdown region. The output impedance X2121z$ X_{{2121}}^{z} $ under large-signal drive incorporating with the X2121s$ X_{{2121}}^{s} $ and X2121T$ X_{{2121}}^{T} $ coefficients is derived and then employed to investigate output matching in the breakdown region and at high input power, which is significant for power amplifier designs. Compared with the conventional hot-Z2121 without X2121T$ X_{{2121}}^{T} $ coefficients considered, X2121z$ X_{{2121}}^{z} $ can be more accurate for the output impedance characterization. The presented analysis based on the X-parameters can be beneficial to output matching at high input power for power amplifier designs in the breakdown region.
Date: 2015
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Persistent link: https://EconPapers.repec.org/RePEc:taf:tewaxx:v:29:y:2015:i:14:p:1867-1874
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DOI: 10.1080/09205071.2015.1062805
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