Direct thermal tuning of the terahertz plasmonic response of semiconductor metasurface

Chunya Luo, Dan Li, Jianquan Yao and Furi Ling

Journal of Electromagnetic Waves and Applications, 2015, vol. 29, issue 18, 2512-2522

Abstract: In this study, the tunable depth of an array of semiconductor indium antimonide (InSb) subwavelength strips was studied by isothermally increasing the intrinsic carrier density, and then increasing the plasma frequency and the dielectric constant in the terahertz (THz) regime. It could be found that the tunable depth can attain 79.07% and the quality factor Q can be up to 7.1 in the window between 0 and 1.2 THz from 450 to 250 K. In order to improve the performance of the device, the strip array of semiconductor InSb on a ferroelectric strontium titanate film was also investigated. The results showed that when the temperature varied from 450 to 250 K, the modulation depth increased and attained 84.06%. These findings would facilitate the design of tunable components in the communication region of the THz regime.

Date: 2015
References: Add references at CitEc
Citations:

Downloads: (external link)
http://hdl.handle.net/10.1080/09205071.2015.1111170 (text/html)
Access to full text is restricted to subscribers.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:taf:tewaxx:v:29:y:2015:i:18:p:2512-2522

Ordering information: This journal article can be ordered from
http://www.tandfonline.com/pricing/journal/tewa20

DOI: 10.1080/09205071.2015.1111170

Access Statistics for this article

Journal of Electromagnetic Waves and Applications is currently edited by Mohamad Abou El-Nasr and Pankaj Kumar Choudhury

More articles in Journal of Electromagnetic Waves and Applications from Taylor & Francis Journals
Bibliographic data for series maintained by Chris Longhurst ().