High Power Ku-Band T/R and SP4T Switches in SOI CMOS

Doojung Kim and Byung-Wook Min

Journal of Electromagnetic Waves and Applications, 2016, vol. 30, issue 6, 728-739

Abstract: This paper presents silicon-on-insulation (SOI) CMOS T/R and SP4T switches with high-power handling capability. The CMOS transistors are stacked and their sources and drains are biased for the high-power handling capability. The TQ trench of 0.18-μ$ \upmu $m SOI CMOS process is properly placed to improve the substrate isolation between transistors. For the T/R switch, the measured insertion loss of Tx and Rx modes are $ > $24 dB in the same frequency band. To author’s knowledge, this T/R switch shows the highest input 1-dB compression point of 34 dBm in Ku-band CMOS switches. The SP4T switch operates in DC-18 GHz, and the measured insertion loss and isolation are $ > $19.5 dB, respectively, with the return loss of

Date: 2016
References: Add references at CitEc
Citations:

Downloads: (external link)
http://hdl.handle.net/10.1080/09205071.2016.1145077 (text/html)
Access to full text is restricted to subscribers.

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:taf:tewaxx:v:30:y:2016:i:6:p:728-739

Ordering information: This journal article can be ordered from
http://www.tandfonline.com/pricing/journal/tewa20

DOI: 10.1080/09205071.2016.1145077

Access Statistics for this article

Journal of Electromagnetic Waves and Applications is currently edited by Mohamad Abou El-Nasr and Pankaj Kumar Choudhury

More articles in Journal of Electromagnetic Waves and Applications from Taylor & Francis Journals
Bibliographic data for series maintained by Chris Longhurst ().