LEED-AES STUDY OF SURFACE STRUCTURES FORMED AT COADSORPTION OF AlAND SbON (100), (111), AND (110) SiSURFACES

A.V. Zotov (), S.V. Ryzhkov, V.G. Lifshits and V.G. Duchinsky
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A.V. Zotov: Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation
S.V. Ryzhkov: Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation
V.G. Lifshits: Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, 5 Radio Street, 690041 Vladivostok, Russian Federation
V.G. Duchinsky: Far East State University, Vladivostok 690022, Russian Federation

Surface Review and Letters (SRL), 1994, vol. 01, issue 02n03, 285-293

Abstract: The formation of the ordered surface structures upon successive deposition of Al and Sb onto the Si(100), Si(111), and Si(110) surfaces held at about 650°C were studied by low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The primary emphasis was given to the investigation of the formation of (Al, Sb)/Si interface at total coverages of adsorbates in submonolayer range. In this case, according to AES data the adsorption of Al and Sb atoms proceeds collaterally in a simple additive manner. In the LEED observations, several new reconstructions,Si(100)c(4×4),Si(100)2×8,Si(100)2×6,Si(111)2×2,${\rm{Si}}\left( {110} \right)\left( {\begin{array}{*{20}c} 2 &3 \\ 0 & 9 \\\end{array}} \right)$, andSi(110)3×4which indicate the formation of the joint (Al, Sb)/Si surface phases were found. The conditions for the formation of the surface structures were summarized in the formation diagrams.

Date: 1994
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DOI: 10.1142/S0218625X9400028X

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