PROBING SURFACES AND INTERFACES WITH OPTICAL TECHNIQUES

Dietrich R.T. Zahn
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Dietrich R.T. Zahn: Lehrstuhl Halbleiterphysik, Technische Universität Chemnitz-Zwickau, Reichenhainer Str. 70, PSF 964, D-09009 Chemnitz, Germany

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 421-428

Abstract: The potential of optical techniques for probing semiconductor surfaces and interfaces is discussed using the example of Raman spectroscopy. The surface sensitivity of the technique is demonstrated by the detection of vibrational modes of atomic monolayers on semiconductor substrates, for instance arsenic on silicon(111). The special feature of Raman spectroscopy, namely its chemical sensivity, is illustrated by two examples: the interdiffusion of group III overlayers, e.g., In on the group V substrate Sb and the detection of reacted layers at II–VI/III– V heterointerfaces. The example of II–VI/III–V heteroepitaxy also serves as an example for demonstrating the growth monitoring capabilities of optical techniques.

Date: 1994
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DOI: 10.1142/S0218625X94000382

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