FERMI LEVEL PINNING AT A SCHOTTKY BARRIER: Na ON GaAs(110) FROM THE LOW TO THE HIGH COVERAGE REGIME

Martina Heinemann
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Martina Heinemann: SERC Daresbury Laboratory, Daresbury, Warrington WA4 4AD, UK

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 429-433

Abstract: The large group of rectifying metal-semiconductor interfaces is better known under the name Schottky barriers or contacts. Their rectifying behavior has been reported for the first time by Braun in 1874 but the understanding of the actual physics at such interfaces is still not complete. This paper summarizes the development of models and shows how modern calculational methods can contribute to a better understanding of Schottky barriers.

Date: 1994
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DOI: 10.1142/S0218625X94000394

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