REFLECTANCE ANISOTROPY OF THE GaAs(001) SURFACE

S.J. Morris, J.M. Bass, D.I. Westwood, D.A. Woolf, C.C. Matthai, R.H. Williams, F. Reinhardt, J. Rumberg, K.C. Rose and W. Richter
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S.J. Morris: Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB, UK
J.M. Bass: Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB, UK
D.I. Westwood: Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB, UK
D.A. Woolf: Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB, UK
C.C. Matthai: Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB, UK
R.H. Williams: Department of Physics and Astronomy, University of Wales College of Cardiff, Cardiff CF2 3YB, UK
F. Reinhardt: Institut für Festkörperphysik der TU Berlin, 10623 Berlin, Germany
J. Rumberg: Institut für Festkörperphysik der TU Berlin, 10623 Berlin, Germany
K.C. Rose: Institut für Festkörperphysik der TU Berlin, 10623 Berlin, Germany
W. Richter: Institut für Festkörperphysik der TU Berlin, 10623 Berlin, Germany

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 481-484

Abstract: By a combination of theoretical calculations and experiments, we have investigated the GaAs(001) surface and found the reflectance anisotropy (RA) to be extremely sensitive to the atomic configuration upon the surface. By performing a series ofab initiopseudopotential calculations of the optical response of the(2×4)surface reconstruction we find that good agreement with experiment can be obtained when the full relaxation of the surface is taken into account. Experimentally, we show that deposition of as little as 0.01 monolayer of Si modifies the surface structure sufficiently that a significant change in the RA spectrum can be observed.

Date: 1994
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DOI: 10.1142/S0218625X94000485

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