A TEMPERATURE-PROGRAMED DESORPTION STUDY OF THE ADSORPTION AND REACTIONS OFD2OON SINGLE CRYSTAL SILICON SURFACES

M.C. Flowers, N.B.H. Jonathan, A. Morris and S. Wright
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M.C. Flowers: Chemistry Department, University of Southampton, Highfield, Southampton SO17 1BJ, UK
N.B.H. Jonathan: Chemistry Department, University of Southampton, Highfield, Southampton SO17 1BJ, UK
A. Morris: Chemistry Department, University of Southampton, Highfield, Southampton SO17 1BJ, UK
S. Wright: Chemistry Department, University of Southampton, Highfield, Southampton SO17 1BJ, UK

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 505-507

Abstract: The adsorption ofD2Oand subsequent desorption ofD2and SiO fromSi(100)-2×1andSi(111)-7×7single crystal surfaces have been investigated using the technique of temperatureprogramed desorption. It has been found that adsorption onSi(100)-2×1is rapid and can be interpreted in terms of first-order Langmuir adsorption kinetics. In contrast, adsorption on theSi(111)-7×7surface proceeds at a very much slower rate following an initial rapid uptake. It is found that theD2TPD peak arising fromD2Oexposure is very similar in shape, width, and desorption temperature to that from atomic deuterium exposure except that a small fraction of the adsorbed deuterium is retained to higher temperatures.

Date: 1994
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DOI: 10.1142/S0218625X94000539

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