HOMOEPITAXIAL GROWTH ON Cu(111) PROBED BY HELIUM ATOM SCATTERING

P.C. Dastoor, J. Ellis, A. Reichmuth, H. Bullman, B. Holst and W. Allison
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P.C. Dastoor: Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK
J. Ellis: Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK
A. Reichmuth: Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK
H. Bullman: Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK
B. Holst: Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK
W. Allison: Cavendish Laboratory, Department of Physics, Cambridge University, Cambridge CB3 0HE, UK

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 509-512

Abstract: The homoepitaxial growth of Cu(111) has been investigated using specular helium atom scattering. Between 400 and 110 K the growth mode gradually changes from step flow at the higher temperatures to multilayer formation at low temperatures. Layerwise growth is not observed for any of the evaporation rates or substrate temperatures investigated, indicating a low diffusion rate across step edges. By lightly sputtering the surface, the density of growth nuclei and hence of step edges can be increased and a more layerwise growth mode results from the improved interlayer mass transport.

Date: 1994
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DOI: 10.1142/S0218625X94000540

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