ORDERED AND DISORDERED Sb-RICHInSb(100)SURFACES STUDIED BY STM

T.S. Jones, C.F. McCONVILLE, F.M. Leibsle and N.V. Richardson
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T.S. Jones: Department of Chemistry and IRC for Semiconductor Materials, Imperial College, South Kensington, London SW7 2AY, UK
C.F. McCONVILLE: Department of Physics, University of Warwick, Coventry CV4 7AL, UK
F.M. Leibsle: IRC for Surface Science, University of Liverpool, Liverpool L69 3BX, UK
N.V. Richardson: IRC for Surface Science, University of Liverpool, Liverpool L69 3BX, UK

Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 513-516

Abstract: Atomic resolution scanning tunneling microscopy (STM) has been used to study the asymmetric-(1×3)andc(4×4)Sb-terminated reconstructions of InSb(100). STM images show that these are examples of ordered and disordered reconstructions respectively. Thec(4×4)structure involves the chemisorption of excess Sb onto an already Sb-terminated surface with the resultant formation of Sb-Sb bonds in the surface layer. The(1×3)structure, however, consists of short chains of individual Sb atoms in the top surface layer. Thec(4×4)structure can be converted into the A-(1×3)by annealing to 500 K with the subsequent loss of Sb.

Date: 1994
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DOI: 10.1142/S0218625X94000552

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