ELLIPSOMETRIC STUDIES OF VERY LOW PRESSURE THERMAL CVD GROWN SILICON NITRIDE THIN FILMS USING HYDRAZOIC ACID AND DICHLOROSILANE
A.S. Bridges,
R. Greef,
N.B.H. Jonathan,
A. Morris and
G.J. Parker
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A.S. Bridges: Department of Chemistry, University of Southampton, Highfield, Southampton, UK
R. Greef: Department of Chemistry, University of Southampton, Highfield, Southampton, UK
N.B.H. Jonathan: Department of Chemistry, University of Southampton, Highfield, Southampton, UK
A. Morris: Department of Chemistry, University of Southampton, Highfield, Southampton, UK
G.J. Parker: Department of Electronics and Computer Science, University of Southampton, Highfield, Southampton, UK
Surface Review and Letters (SRL), 1994, vol. 01, issue 04, 573-576
Abstract:
High quality silicon nitride thin films have been grown using dichlorosilane and hydrazoic acid (ratio 1:5) at a total ambient growth pressure of1×10–4Torr. Sequential growth studies of successive CVD nitride films over the 974-1068 K temperature range revealed an activation energy of84kJmol–1. Film thicknesses and refractive indices were obtained usingin situreal-time ellipsometry, and the majority of the grown films displayed a refractive index of 2.0. Ellipsometric data for the growth of an 8 Å thermal-nitride film with a refractive index of 2.0 are also given.
Date: 1994
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DOI: 10.1142/S0218625X94000692
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